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| Name | Professor Philip Klipstein | WIN Seminar |
| Video Uploader | Video From Waterloo Institute for Nanotechnology |
| Upload Date | This Video Uploaded At 06-12-2017 19:21:23 |
| Video Discription | Professor Philip Klipstein - Semiconductor Devices (SCD), Haifa, Israel - presents a Waterloo Institute for Nanotechnology (WIN) seminar. "InAs/GaSb/AlSb Superlattice Detectors and Topological Superlattices" As first predicted by Sai-Halasz, Tsu and Esaki in 1977, type II superlattices (T2SLs) based on alternating layers of InAs and GaSb exhibit rather unique properties, including a zero bandgap at a critical value of the layer thicknesses. In this respect, T2SLs bear a close relationship to the alloy, HgxCd1-xTe (“MCT”), where the bandgap vanishes at a critical value of the composition parameter, x. MCT photodiodes are widely used as tunable infrared detector elements, because they offer a versatile technology that can match the characteristic photon wavelength of most infrared applications. On the other hand, InAs/GaSb photodiodes have suffered, historically, from higher dark currents and fabrication issues that have severely limited their uptake in similar applications.This position has changed recently, due to the development of a new XBp barrier architecture and a new and robust passivation process. A 640 x 512 format, 15 μm pitch LWIR focal plane array detector was demonstrated in 2016 by SCD, with a quantum efficiency of less than 50%, a pixel operability of less than 99%, and a dark current only about one order of magnitude larger than the state of the art Rule 07 value. The SCD T2SL XBp detector contains both an InAs/GaSb active layer (AL) and an InAs/AlSb barrier layer. The physical principles of the detector will be described, together with simulation methods that can predict the detector quantum efficiency and dark current from a basic definition of the superlattice period, the AL stack thickness and the minority carrier lifetime. For layer thicknesses greater than the zero bandgap values, both InAs/GaSb/AlSb and HgTe/CdTe superlattices undergo a transition to a topological insulator phase (TI). Some basic properties of the topological phase will be discussed, including a graphene like dispersion at the TI transition and possible advantages of the TI phase for low temperature spintronic devices. --- Visit our website: http://www.nano.uwaterloo.ca Like us on facebook: http://www.facebook.com/uwnano Follow us on twitter: http://twitter.com/WINano [4SNpitjVX1I] |
| Category | Education |
| Tags | University | Of | Waterloo | UW | Institute | for | Nanotechnology | Waterloo Institute for Nanotechnology | WIN | Science | University of Waterloo |
